1 of 10 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in vg pin 1 (cut) rf out vd pin 2 gnd base rfha1020 280w gan wide-band pulsed power amplifier the rfha1020 is a 50v 280w high power discrete amplifier designed for l-band pulsed radar, air traffic control and su rveillance and general purpose broadband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single pack- age. the rfha1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. the package provides ex cellent thermal stability through the use of advanced heat sink and power dissipati on technologies. ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. features ? wideband operation: 1.2ghz to 1.4ghz ? advanced gan hemt technology ? advanced heat-sink technology ? supports multiple pulse conditions ? 10% to 20% duty cycle ? 100 ? s to 1ms pulse width ? integrated matching components for high terminal impedances ? 50v operation typical performance: ? output pulsed power: 280w ? pulse width: 100 ? s, duty cycle 10% ? small signal gain: 15db ? high efficiency (55%) ? - 40c to 85c operating temperature applications ? radar ? air traffic control and surveillance ? general purpose broadband amplifiers rfha1020s2 2-piece sample bag rfha1020sb 5-piece bag rfha1020sq 25-piece bag rfha1020sr 50 pieces on 7? short reel rfha1020tr13 250 pieces on 13? reel rfha1020pcba-410 fully assembled evaluation board 1.2ghz to 1.4ghz; 50v operation ds120508 ? package: flanged ceramic, 2 pin
2 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g ) -8 to +2 v gate current (i g )155ma operational voltage 55 v ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t c )-40 to +85 c operating junction temperature (t j )250 c human body model class 1a mttf (t j < 200c) mttf (t j < 250c) 3.0e + 06 1.4e + 05 hours thermal resistance, rth (junction to case) t c = 85c, dc bias only 0.90 c/w t c = 85c, 100 ? s pulse, 10% duty cycle 0.18 t c = 85c, 1ms pulse, 10% duty cycle 0.34 * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j-c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )50v gate voltage (v gsq )-8-3-2v drain bias current 440 ma frequency of operation 1200 1400 mhz dc functional test i g (off) ? gate leakage 2 ma v g = -8v, v d = 0v i d (off) ? drain leakage 2.5 ma v g = -8v, v d = 50v v gs (th) ? threshold voltage -3.5 v v d = 50v, i d = 40ma v ds (on) ? drain voltage at high current 0.28 v v g = 0v, i d = 1.5a rf functional test [1], [2] small signal gain 14 db f = 1200mhz, p in = 30dbm power gain 12.3 db f = 1200mhz, p in = 41.7dbm input return loss -8 - 5.5 db f = 1200mhz, p in = 41.7dbm output power 54 dbm f = 1200mhz, p in = 41.7dbm drain efficiency 48 50 % f = 1200mhz, p in = 41.7dbm caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . parameter specification unit condition min. typ. max. rf functional test (continued) [1], [2] small signal gain 15 db f = 1300mhz, p in = 30dbm power gain 12.3 db f = 1300mhz, p in = 41.7dbm input return loss -10 -6 db f = 1300mhz, p in = 41.7dbm output power 54 dbm f = 1300mhz, p in = 41.7dbm drain efficiency 48 55 % f = 1300mhz, p in = 41.7dbm small signal gain 14 db f = 1400mhz, p in = 30dbm power gain 12.3 db f = 1400mhz, p in = 41.7dbm input return loss -8 -5.5 db f = 1400mhz, p in = 41.7dbm output power 54 dbm f = 1400mhz, p in = 41.7dbm drain efficiency 48 55 % f = 1400mhz, p in = 41.7dbm rf typical performance [1], [2] frequency range 1200 1400 mhz small signal gain 15 db p in = 30dbm power gain 13 db p out = 54.50dbm gain variation with temperature -0.015 db/c at peak output power output power (p sat ) 54.50 dbm peak output power 280 w peak output power drain efficiency 55 % at peak output power [1] test conditions: pw = 100 ? s, dc = 10%, v dsq = 50v, i dq = 440ma, t = 25c. [2] performance in a standard tuned test fixture.
4 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tune test fixture (t = 25c, unless otherwise noted) 12 13 14 15 16 17 18 19 45 46 47 48 49 50 51 52 53 54 55 gain (db) output power (dbm) gain versus output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, v d = 50v, i dq = 440ma) gain 85c gain 25c gain -40c 10 20 30 40 50 60 70 45 46 47 48 49 50 51 52 53 54 55 drain efficiency (%) output power (dbm) efficiency versus output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, v d = 50v, i dq = 440ma) eff 85c eff 25c eff -40c -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 45 46 47 48 49 50 51 52 53 54 55 irl, input return loss (db) output power (dbm) input return loss versus output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, v d = 50v, i dq = 440ma) irl 85c irl 25c irl -40c -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 10 11 12 13 14 15 16 17 18 19 1200 1220 1240 1260 1280 13 00 1320 1340 1360 1380 1400 input return loss (db) gain (db) frequency (mhz) small signal performance versus frequency, p out = 44dbm (pulsed 10% duty cy cle, 100s, v d = 50v, i dq = 440ma) gain irl fixed tuned test circuit -20 -18 -16 -14 -12 -10 -8 -6 11 12 13 14 15 16 17 18 1200 1220 1240 1260 1280 13 00 1320 1340 1360 1380 1400 input return loss (db) gain (db) frequency (mhz) gain/irl versus frequency, p out = 54dbm (pulsed 10% duty cyle, 100s, v d = 50v, i dq = 440ma) gain irl fixed tuned test circuit 50 51 52 53 54 55 56 57 58 59 60 1200 1220 1240 1260 1280 13 00 1320 1340 1360 1380 1400 drain efficiency (%) frequency (mhz) drain efficiency versus frequency, p out = 54dbm (pulsed 10% duty cy cle, 100s, v d = 50v, i dq = 440ma) eff fixed tuned test circuit
5 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 10 20 30 40 50 60 70 12 13 14 15 16 17 18 45 46 47 48 49 50 51 52 53 54 55 drain efficiency (%) gain (db) output power (dbm) gain/ efficiency versus p out , f = 1300mhz (pulsed 10% duty cy cle, 100s, v d = 50v, i dq = 440ma) gain drain eff 40 45 50 55 60 65 70 200 210 220 230 240 250 260 270 280 290 300 310 320 10 100 1000 drain efficiency(%) p out (w) pulse width (usec) p out /de versus pulse width, f = 1300mhz (pulsed 10% duty cycle, v d = 50v, i dq = 440ma) output power drain efficiency 40 45 50 55 60 65 70 200 225 250 275 300 325 350 10 20 30 40 50 60 drain efficiency(%) p out (w) duty cycle (%) p out /de versus duty cycle, f = 1300mhz (pulsed, 100s pulse, v d = 50v, i dq = 440ma) output power drain efficiency 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 powerdissipation(w) maximumcasetemperature( c) pulsepowerdissipationderatingcurve (basedonmaximumpackagetemperatureandrth) 1mspulsewidth,10%dutycycle 100spulsewidth,10%dutycycle
6 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm) pin names and descriptions pin name description 1vg gate ? vg rf input 2vd drain ? vd rf output 3gnd source ? ground base
7 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rfha1020 evaluation board esd sensitive material. please use proper esd precau tions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering up the evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -8v to vg. 4. apply 50v to vd. 5. increase v g until drain current reaches 440ma or desired bias point. 6. turn on the rf input. important note: depletion mode device; when biasing the device, v g must be applied before v d . when removing bias, v d must be removed before v g is removed. failure to follow this sequence will cause the device to fail. note: for optimal rf performance, consistent and optimal heat re moval from the base of the package is required. a thin layer of thermal grease should be applied to the interface between th e base of the package and the equipment chassis. it is recom- mended that a small amount of thermal grease is applied to the underside of the device package. even application and removal of excess thermal grease can be achieved by spreadin g the thermal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board.
8 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials component value manufacturer part number r1, r4 10 ? panasonic erj-8geyj100v r2 0 ? panasonic erj-8gey0r00 r3 51 ? panasonic erj-8geyj510 c1, c2, c11, c13 82pf dialectric labs 800a820jt c17 56pf atc atc800a560jt c5 0.1 ? f panasonic ECJ-2VB1H104K c6, c15 10000pf panasonic ecj-2vb1h103k c16 0.1 ? f panasonic ECJ-2VB1H104K c8, c18 10 ? f panasonic eca-2am100 c20 3.9pf atc 800a3r9ct c21 1.1pf atc 800a1r1bt c22 0.3pf atc 800a0r3bt l20, l21 115 ? , 10a steward 28f0181-1sr-10 l22, l23 75 ? , 10a steward 35f0121-1sr-10 c3, c4, c7, c12, c14, c19 not populated rfha1020 c20 r4 c2 v gate c1 50 ? ? strip 50 ? ? strip j2 rf out l2 l1 c6 r2 c8 + c12 c13 c14 c15 c16 c19 r3 c17 l22 l23 j1 rf in l21 l20 c18 + c21 v drain c11 c22 c3 c4 r1 c5 c7
9 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. frequency z source ( ? )z load ( ?? 1200mhz 10.7 - j5.0 33.9 - j10 1300mhz 9.48 - j3.24 34.2 - j10.9 1400mhz 8.2 - j1.2 34.5 - j12.33 evaluationboard matching network evaluationboard matching network z source z load
10 of 10 rfha1020 ds120508 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of th e device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages ar e varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to th e drain. during the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal ca pacitance measurements. the ca pacitance values presented in the typical characteristics table of th e device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletio n mode high electron mobility tr ansistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transi stor. the gate voltage must be taken to a potential lower than the source voltage to pinch off th e device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determin ed by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristic s of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for biasin g this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturin g the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. knowing the dissipated power at the time of th e measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat remo val must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including he atsinking systems and air flow mecha- nisms. incorporating the dissipated dc power, it is possi ble to calculate the junction temperature of the device.
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